Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 221W Tc
Rds On (Max) @ Id, Vgs 84m Ω @ 20A, 15V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 450V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 15V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 15V